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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK954 description drain current C i d =3a@ t c =25 drain source voltage- : v dss =800v(min) fast switching speed applications designed especially for high voltage. high speed power switching. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 800 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 3 a p tot total dissipation@tc=25 100 w t j max. operating junction temperature 80 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK954 electrical characteristics (t c =25 ) symbol parameter conditions min typ. max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 800 v v gs(th) gate threshold voltage v ds = v gs ; i d = 10ma 2.1 3.0 4.0 v r ds(on) drain-source on-stage resistance v gs = 10v; i d =1.5a 3.0 4.0 i gss gate source leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds =800v; v gs = 0 500 ua ton turn-on time v gs =10v;i d =2.1a; r l =50 60 90 ns toff turn-off time 210 340 ns v sd diode forward voltage i f =3a; v gs =0 1.00 1.35 v pdf pdffactory pro www.fineprint.cn |
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